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SVS24N60FJD2 - 600V DP MOS POWER TRANSISTOR

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Silan Microelectronics

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SVS24N60FJD2 600V DP MOS POWER TRANSISTOR by Silan Microelectronics - Datasheet Preview — Datasheet preview – SVS24N60FJD2

Datasheet Details

Part number	SVS24N60FJD2
Manufacturer	Silan Microelectronics
File Size	352.86 KB
Description	600V DP MOS POWER TRANSISTOR
Datasheet	SVS24N60FJD2 Datasheet
Additional preview pages of the SVS24N60FJD2 datasheet.

Product details

Description

SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology.

Features

24A, 600V, RDS(on)(typ. )=0.14@VGS=10V.
New revolutionary high voltage technology.
Ultra low gate charge.
Periodic avalanche rated.
Extreme dv/dt rated.
High peak current capability 2 1 3 1.Gate 2.Drain 3.Source 1 23 123 TO-220F-3L TO-220-3L 1 23 TO-220FJ-3L 123 TO-3P.

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Published: Oct 26, 2024 |