Datasheet Details
| Part number | SVS60R190FJDD4 |
|---|---|
| Manufacturer | Silan Microelectronics |
| File Size | 721.07 KB |
| Description | 600V SUPER JUNCTION MOS POWER TRANSISTOR |
| Datasheet |
 SVS60R190FJDD4 Datasheet
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General Description
SVS60R190FJD(F)(D)(L8A)(T)(S)(K)(P7)(PN)D4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.
It achieves low conduction loss and switching losses.
Key Features
- 123 1 TO-220FJD-3L 3 1.Gate 2.Drain 3.Source 1 2 3 13 TO-252-2L D(2) G(1) S(3) S(3) S(3) TO-220F-3L DFN-4-8x8x0.85-2.0 123 TO-220-3L 1 3 TO-263-2L 12 3 TO-262-3L.
- 20A, 600V, RDS(on)(typ. )=0.165@VGS=10V.
- New revolutionary high voltage technology.
- Ultra low gate charge.
- Periodic avalanche rated.
- Extreme dv/dt rated.
- High peak current capability.
- 100% avalanche tested.
- Pb-free lead plating.
- RoHS compliant 12 3 TO-3P 12 3 TO-247-3L KEY P.