SVS60R190FJDD4 Datasheet | Silan Microelectronics

Silan Microelectronics SVS60R190FJD(F)(D)(L8A)(T)(S)(K)(P7)(PN)D4_Datasheet 20A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS60R190FJD(F)(D)(L8A)(T)(S)(K)(P7)(PN)D4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. Features TO-220FJD-3L 1.Gate 2.Drain 3.Source 1 2 3 TO-252-2L D(2) G(1) S(3) S(3) S(3) TO-220F-3L DFN-4-8x8x0.85-2.0 123 TO-220-3L 1 3 TO-263-2L 12 3 TO-262-3L - 20A, 600V, RDS(on)(typ.)=0.165@VGS=10V - New revolutionary high voltage technology - Ultra low gate charge - Periodic avalanche rated - Extreme dv/dt rated - High peak current capability - 100% avalanche tested - Pb-free lead plating - Ro HS pliant 12 3 TO-3P 12 3 TO-247-3L KEY PERFORMANCE...