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SVS7N65DD2 Datasheet 650V SUPER JUNCTION MOS POWER TRANSISTOR

Manufacturer: Silan Microelectronics

Download the SVS7N65DD2 datasheet PDF. This datasheet also includes the SVS7N65DD2TR variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (SVS7N65DD2TR-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVS7N65DD2
Manufacturer Silan Microelectronics
File Size 285.21 KB
Description 650V SUPER JUNCTION MOS POWER TRANSISTOR
Download SVS7N65DD2 Download (PDF)

General Description

SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.

Overview

Silan Microelectronics SVS7N65D(F)(MJ)(FJ)D2_Datasheet 7A, 650V SUPER JUNCTION MOS POWER.

Key Features

  • 2 1 3 12 3 TO-251J-3L 1.Gate 2.Drain 3.Source 13 TO-252-2L.
  • 7A,650V, RDS(on)(typ. )=0.55@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Enhanced avalanche capability.
  • Extreme dv/dt rated.
  • High peak current capability 12 3 TO-220FJ-3L 12 3 TO-220F-3L.

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