SVS7N70SD2
DESCRIPTION
SVS7N70F(D)(MJ)(S)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies.
FEATURES
3 1.Gate 2.Drain 3.Source
1 3
TO-252-2L
1 3
TO-263-2L
- 7A, 700V, RDS(on)(typ.)=0.52@VGS=10V
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- High peak current capability
1 23 TO-251J-3L
1 23
TO-220F-3L
ORDERING INFORMATION
Part No.
SVS7N70FD2 SVS7N70DD2TR SVS7N70MJD2 SVS7N70SD2
Package
TO-220F-3L TO-252-2L TO-251J-3L TO-263-2L
Marking
7N70FD2 7N70DD2 7N70MJD2 7N70SD2
Hazardous Substance Control
Halogen free Halogen free Halogen free Halogen free
Packing Type
Tube...
