SVSP20N60FJDD2 Datasheet | Silan Microelectronics

Silan Microelectronics SVSP20N60FJD(K)(T)(PN)(S)(P7)D2_Datasheet 20A, 600V SUPER JUNCTION MOS POWER TRANSISTOR GENERAL DESCRIPTION SVSP20N60FJD(K)(T)(PN)(S)(P7)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, for example. it is suitable for hard and soft switching topologies. 2 1 12 3 TO-262-3L 3 1.Gate 2.Drain 3.Source TO-263-2L TO-220FJD-3L 1 2 3 TO-220-3L Features - 20A, 600V, RDS(on)(typ.)=0.16@VGS=10V - New revolutionary high voltage technology - Ultra low gate charge - Periodic avalanche rated - Extreme dv/dt rated - High peak current capability 1 2 3 TO-247-3L 123 TO-3P ORDERING INFORMATION Part No. SVSP20N60FJDD2 SVSP20N60KD2 SVSP20N60TD2 SVSP20N60PND2 SVSP20N60SD2 SVSP20N60SD2TR SVSP20N60P7D2 Package TO-220FJD-3L TO-262-3L TO-220-3L TO-3P TO-263-2L TO-263-2L TO-247-3L Marking P20N60FJD P20N60KD2 P20N60TD2 P20N60PN P20N60SD2 P20N60SD2 P20N60 Hazardous Substance Control Halogen free Halogen free Halogen free Halogen free Halogen free Halogen free Halogen free Packing Type Tube Tube Tube Tube...