SVSP7N60FE2 Datasheet | Silan Microelectronics

Silan Microelectronics SVSP7N60F(D)E2_Datasheet 7A, 600V DP MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(D)E2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, for example, it is suitable for hard and soft switching topologies. Features - 7A,600V, RDS(on)(typ.)=0.48@VGS=10V - New revolutionary high voltage technology - Ultra low gate charge - Enhanced avalanche capability - Extreme dv/dt rated - High peak current...