SVT041R7NT
DESCRIPTION
SVT041R7NT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems.
1 3
1.Gate 2.Drain 3.Source
FEATURES
- 195A, 40V, RDS(on)(typ.)=1.4m@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Extreme dv/dt rated
- 100% avalanche tested
- Pb-free lead plating
- Ro HS pliant
1 2 3
TO-220-3L
KEY PERFORMANCE PARAMETERS
Characteristics VDS
VGS(th) RDS(on),max
ID Qg.typ
Ratings 40
2.0~4.0 1.7 195 175
Unit V V m A n C
ORDERING INFORMATION
Part No. SVT041R7NT
Package TO-220-3L
Marking 041R7NT
Hazardous Substance Control pb free
Packing Type Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn
Rev.:1.0 Page 1 of 8
Silan Microelectronics
SVG041R7NT_Datasheet
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