SVT044R5NL5 Datasheet | Silan Microelectronics

DESCRIPTION SVT044R5NT/D/L5 an N-channel enhancement mode power MOS field effect transistor which is produced using SILAN LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, Power Management for Inverter Systems. FEATURES - 178A,40V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability S1 8D S2 7D S3 6D G4 5D 1.Gate 2.Drain 3.Source 1 2 3 TO-220-3L 8 765 TO-252-2L 1 2 34 PDFN-8-5X6X0.95-1.27 ORDERING INFORMATION Part No. SVT044R5NT SVT044R5NDTR SVT044R5NL5TR Package TO-220-3L TO-252-2L PDFN-8-5X6X0.95-1.27 Marking 044R5NT 044R5ND 044R5NL5 Hazardous Substance Control Pb free Halogen free Halogen free Packing Type Tube Tape&Reel Tape&Reel ABSOLUTE MAXIMUM RATINGS (UNLESS OTHERWISE NOTED, TA=25C) Characteristics Symbol Drain-Source...