SVT10111ND - 100V N-CHANNEL MOSFET

Silan Microelectronics

General Description

SVT10111ND is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

Key Features

14A,100V, RDS(on)(typ. )=85m@VGS=10V.
Low gate charge.
Low Crss.
Fast switching.
Improved dv/dt capability.

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SVT10111ND 100v n-channel mosfet by Silan Microelectronics - Datasheet Preview

Datasheet Details

Part number	SVT10111ND
Manufacturer	Silan Microelectronics
File Size	312.38 KB
Description	100V N-CHANNEL MOSFET
Datasheet	SVT10111ND Datasheet

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Silan Microelectronics SVT10111ND_Datasheet 14A, 100V N-CHANNEL MOSFET DESCRIPTION SVT10111ND is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This device is widely used in UPS, Power Management for Inverter Systems . FEATURES  14A,100V, RDS(on)(typ.)=85m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE 2 1 3 1.Gate 2.Drain 3.