SVT10111ND Overview
SVT10111ND is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and mutation mode. This device is widely used in UPS, Power Management for Inverter Systems.
SVT10111ND Key Features
- 14A,100V, RDS(on)(typ.)=85m@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability