Datasheet4U Logo Datasheet4U.com

SVT1040 - N-CHANNEL MOSFET

Download the SVT1040 datasheet PDF. This datasheet also covers the SVT1040SA variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

SVT1040SA is an N-channel enhancement mode power MOS field effect transistor which is produced using Trench Mos technology.

Key Features

  • 10A, 40V, RDS(on)(typ. )=15m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 78 56 2 4 1 1、3. Source 3 2、4. Gate 7、8;5、6. Drain 8 1 23 4 SOP-8-225-1.27.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVT1040SA-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVT1040
Manufacturer Silan Microelectronics
File Size 278.93 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet SVT1040 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVT1040SA_Datasheet 10A, 40V N-CHANNEL MOSFET DESCRIPTION SVT1040SA is an N-channel enhancement mode power MOS field effect transistor which is produced using Trench Mos technology. The improved trench stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in UPS, DC-DC converters. FEATURES  10A, 40V, RDS(on)(typ.)=15m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 78 56 2 4 1 1、3. Source 3 2、4. Gate 7、8;5、6. Drain 8 1 23 4 SOP-8-225-1.27 ORDERING INFORMATION Part No. SVT1040SA SVT1040SATR Package SOP-8-225-1.