SVT10500PD - P-CHANNEL MOSFET

Silan Microelectronics

General Description

SVT10500PD is a P channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

Key Features

-30A，-100V，RDS(on)(typ. ) =35m@VGS=-10V.
Low gate charge.
Low Crss.
Fast switching.
Improved dv/dt capability.
100% avalanche tested.
Pb-free lead plating.
RoHS compliant 1 3 TO-252-2L KEY.

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SVT10500PD p-channel mosfet by Silan Microelectronics - Datasheet Preview

Datasheet Details

Part number	SVT10500PD
Manufacturer	Silan Microelectronics
File Size	373.17 KB
Description	P-CHANNEL MOSFET
Datasheet	SVT10500PD Datasheet

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Silan Microelectronics SVT10500PD_Datasheet -30A, -100V P CHANNEL MOSFET DESCRIPTION SVT10500PD is a P channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in UPS, Power Management for Inverter Systems. 2 1 3 1.Gate 2.Drain 3.Source FEATURES  -30A，-100V，RDS(on)(typ.) =35m@VGS=-10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability  100% avalanche tested  Pb-free lead plating  RoHS compliant 1 3 TO-252-2L KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.