SVT10500PD
DESCRIPTION
SVT10500PD is a P channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance.
This device is widely used in UPS, Power Management for Inverter Systems.
1 3
1.Gate 2.Drain 3.Source
FEATURES
- -30A，-100V，RDS(on)(typ.) =35m@VGS=-10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability
- 100% avalanche tested
- Pb-free lead plating
- Ro HS pliant
1 3
TO-252-2L
KEY PERFORMANCE PARAMETERS
Characteristics VDS
VGS(th) RDS(on),max
ID Qg.typ
Ratings -100
-1.5~-2.5 50 -30 80
Unit V V m A n C
ORDERING INFORMATION
Part No. SVT10500PDTR
Package TO-252-2L
Marking 10500PD
Hazardous Substance Control Halogen free
Packing Type Tape & Reel
HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn
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