SCDP120R040NP4B
DESCRIPTION
SCDP120R040NP4B is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s Silicon Carbide technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for switching power supplies, inverters, and DC-DC converters.
FEATURES
- 66A, 1200V, RDS(on)(typ.)= 40m@VGS=15V
- Silicon Carbide technology
- Low switching loss
- Low reverse recovery charge
- Reduced requirement for heat dissipation
- 100% avalanche tested
- Pb-free lead plating
- Ro HS pliant
KEY PERFORMANCE PARAMETERS
Characteristics VDS
VGS(th) RDS(on),max.
ID.pulse Qg.typ.
Ratings 1200
1.8~3.6 53.5 132 101
Unit V V m A n C
1. Drain
2. Power Source
3. Driver Source
4. Gate
1 234
TO-247B-4L
ORDERING INFORMATION
Part No. SCDP120R040NP4B
Package TO-247B-4L
Marking P120R040N
Hazardous...
