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SCDP120R040NP4B - 1200V SiC MOS POWER TRANSISTOR

Description

SCDP120R040NP4B is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s Silicon Carbide technology.

It achieves low conduction loss and switching losses.

Features

  • 66A, 1200V, RDS(on)(typ. )= 40m@VGS=15V.
  • Silicon Carbide technology.
  • Low switching loss.
  • Low reverse recovery charge.
  • Reduced requirement for heat dissipation.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant KEY.

📥 Download Datasheet

Datasheet Details

Part number SCDP120R040NP4B
Manufacturer Silan Semiconductors
File Size 682.97 KB
Description 1200V SiC MOS POWER TRANSISTOR
Datasheet download datasheet SCDP120R040NP4B Datasheet

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Full PDF Text Transcription

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Silan Microelectronics SCDP120R040NP4B_Datasheet 40mΩ, 1200V SiC MOS POWER TRANSISTOR DESCRIPTION SCDP120R040NP4B is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s Silicon Carbide technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for switching power supplies, inverters, and DC-DC converters. FEATURES  66A, 1200V, RDS(on)(typ.
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