SCDP120R040NP4B Description
SCDP120R040NP4B is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s Silicon Carbide technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.
SCDP120R040NP4B Key Features
- 66A, 1200V, RDS(on)(typ.)= 40m@VGS=15V
- Silicon Carbide technology
- Low switching loss
- Low reverse recovery charge
- Reduced requirement for heat dissipation
- 100% avalanche tested
- Pb-free lead plating
- RoHS pliant