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Silan Microelectronics
SGT10T60SD1S/F_Datasheet
10A, 600V FIELD STOP IGBT
DESCRIPTION
The SGT10T60SD1S/F field stop IGBT adopts Silan Field Stop III technology, features low conduction loss and switching loss, is applicable to UPS, SMPS and PFC fields.
FEATURES
10A, 600V, VCE(sat)(typ.)=1.65V@IC=10A Low conduction loss Fast switching High input impedance
C 2
1 G
3 E
1 3
TO-263-2L
123
TO-220F-3L
NOMENCLATURE
IGBT series
SGT 10 T 60 S D X 1 S
Current, 70: 70A
N : N Channel NE : N-channel planar
gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7
Voltage, 65: 650V 120: 1200V
Package D : TO-263; F:TO-220F-3L
1,2,3 : Version No.
SGT10T60SD1S Datasheet
