SGT10U60SDM2D Datasheet | Silan Semiconductors

Silan Microelectronics SGT10U60SDM2D_Datasheet 10A, 600V FIELD STOP IGBT DESCRIPTION The SGT10U60SDM2D field stop IGBT adopts Silan Field Stop IV+ technology, Features low conduction loss and switching loss, is applicable to UPS, SMPS, motor application and PFC fields. Features - 10A, 600V, VCE(sat)(typ.)=1.65V@IC=10A - Low conduction loss - Fast switching - High input impedance C 2 1 G 3 E TO-252-2L NOMENCLATURE IGBT series Current, 10: 10A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V 120: 1200V SGT 10 U 60 S D M 2 D ORDERING INFORMATION Part No. SGT10U60SDM2DTR Package...