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SGT10U60SDM2D - 600V FIELD STOP IGBT

General Description

The SGT10U60SDM2D field stop IGBT adopts Silan Field Stop IV+ technology,

Key Features

  • low conduction loss and switching loss, is applicable to UPS, SMPS, motor.

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Datasheet Details

Part number SGT10U60SDM2D
Manufacturer Silan Semiconductors
File Size 586.94 KB
Description 600V FIELD STOP IGBT
Datasheet download datasheet SGT10U60SDM2D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silan Microelectronics SGT10U60SDM2D_Datasheet 10A, 600V FIELD STOP IGBT DESCRIPTION The SGT10U60SDM2D field stop IGBT adopts Silan Field Stop IV+ technology, features low conduction loss and switching loss, is applicable to UPS, SMPS, motor application and PFC fields. FEATURES  10A, 600V, VCE(sat)(typ.)=1.65V@IC=10A  Low conduction loss  Fast switching  High input impedance C 2 1 G 3 E 13 TO-252-2L NOMENCLATURE IGBT series Current, 10: 10A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V 120: 1200V SGT 10 U 60 S D M 2 D ORDERING INFORMATION Part No. SGT10U60SDM2DTR Package TO-252-2L Marking 10U60SD2 Package D: TO-252-3L 1,2,3 : Version No.