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SGT70N65FD1P7 - 650V FIELD STOP IGBT

Download the SGT70N65FD1P7 datasheet PDF. This datasheet also covers the SGT70N65FD1P7-SilanSemiconductors variant, as both devices belong to the same 650v field stop igbt family and are provided as variant models within a single manufacturer datasheet.

General Description

SGT70N65FD1P7 using Field Stop IGBT technology, offers the optimum performance for induction Heating, UPS, SMPS and PFC application.

Key Features

  • 70A, 650V, VCE(sat)(typ. )=2.3V@IC=70A.
  • Low conduction loss.
  • Fast switching.
  • High input impedance C 2 1 G 3 E 123 TO-247-3L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SGT70N65FD1P7-SilanSemiconductors_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SGT70N65FD1P7
Manufacturer Silan Semiconductors
File Size 265.92 KB
Description 650V FIELD STOP IGBT
Datasheet download datasheet SGT70N65FD1P7 Datasheet

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Other Datasheets by Silan Semiconductors

Part Number Description
SGT70N65FDM1P7 650V FIELD STOP IGBT
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SGT70N65FD1P7_Datasheet 070A, 650V FIELD STOP IGBT DESCRIPTION SGT70N65FD1P7 using Field Stop IGBT technology, offers the optimum performance for induction Heating, UPS, SMPS and PFC application. FEATURES  70A, 650V, VCE(sat)(typ.)=2.3V@IC=70A  Low conduction loss  Fast switching  High input impedance C 2 1 G 3 E 123 TO-247-3L NOMENCLATURE IGBT series Current, 70: 70A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V 120: 1200V SGT 70 N 65 F D X 1 P7 Package P7 : TO-247-3L F : TO-220F-3L etc. 1,2,3… : Version No.