SGT70N65FDM1P7 - 650V FIELD STOP IGBT

Silan Semiconductors

General Description

SGT70N65FD1M1P7 adopts Field Stop IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application.

Key Features

70A, 650V, VCE(sat)(typ. )=2.3V@IC=70A.
Low conduction loss.
Fast switching.
High input impedance C 2 1 G 3 E 12 3 TO-247-3L.

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SGT70N65FDM1P7 650v field stop igbt by Silan Semiconductors - Datasheet Preview

Datasheet Details

Part number	SGT70N65FDM1P7
Manufacturer	Silan Semiconductors
File Size	267.30 KB
Description	650V FIELD STOP IGBT
Datasheet	SGT70N65FDM1P7 Datasheet

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Full PDF Text Transcription (Reference)

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Silan Microelectronics SGT70N65FDM1P7_Datasheet 70A, 650V FIELD STOP IGBT DESCRIPTION SGT70N65FD1M1P7 adopts Field Stop IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application. FEATURES  70A, 650V, VCE(sat)(typ.)=2.3V@IC=70A  Low conduction loss  Fast switching  High input impedance C 2 1 G 3 E 12 3 TO-247-3L NOMENCLATURE SGT 70 N 65 □□□ P□ IGBT series Current: 70 denotes 70A N : N Channel NE : N-channel planar gate ESD T : N-channel trench gate Voltage: 65 denotes 650V Package: P7 denotes TO-247 1,2,3… : version No. D : package with fast recovery diode R : integrated with freewheeling diode L : Low saturation voltage S : Standard Q : Quick F : High speed UF : Ultra high speed ORDERING INFORMATION Part No.