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SGTP40V120FDB2P7 - 1200V FIELD STOP IGBT

This page provides the datasheet information for the SGTP40V120FDB2P7, a member of the SGTP40V120FDB2P7-SilanSemiconductors 1200V FIELD STOP IGBT family.

Description

The SGTP40V120FDB2P7 field stop IGBT adopts Silan Field Stop V technology,

Features

  • low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields.

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Datasheet preview – SGTP40V120FDB2P7

Datasheet Details

Part number SGTP40V120FDB2P7
Manufacturer Silan Semiconductors
File Size 480.64 KB
Description 1200V FIELD STOP IGBT
Datasheet download datasheet SGTP40V120FDB2P7 Datasheet
Additional preview pages of the SGTP40V120FDB2P7 datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SGTP40V120FDB2P7_Datasheet 40A, 1200V FIELD STOP IGBT DESCRIPTION The SGTP40V120FDB2P7 field stop IGBT adopts Silan Field Stop V technology, features low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields. FEATURES  40A, 1200V, VCE(sat)(typ.)=1.9V@IC=40A  Low conduction loss  Ultra-fast switching  High input impedance  TJmax=175C C 2 1 G 3 E 123 TO-247-3L NOMENCLATURE IGBT series Industrial grade Current, 40: 40A N : N-channel NE : N-channel planner gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 5+ Y : Field Stop5++ A : Field Stop 6 Voltage, 75:750V 120: 1200V SGT P 40 V 120 F D B 2 P7 Package PW: TO-247-3L 1,2,3 : Version No.
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