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SGTP40V65SDB1P7 - 650V FIELD STOP IGBT

Description

The SGTP40V65SDB1P7 field stop IGBT adopts Silan Field Stop V technology,

Features

  • low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields.

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Datasheet Details

Part number SGTP40V65SDB1P7
Manufacturer Silan Semiconductors
File Size 422.88 KB
Description 650V FIELD STOP IGBT
Datasheet download datasheet SGTP40V65SDB1P7 Datasheet
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Silan Microelectronics SGTP40V65SDB1P7_Datasheet 40A, 650V FIELD STOP IGBT DESCRIPTION The SGTP40V65SDB1P7 field stop IGBT adopts Silan Field Stop V technology, features low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields. FEATURES  40A, 650V, VCE(sat)(typ.)=1.35V@IC=40A  Low conduction loss  Ultra-fast switching  High input impedance  TJmax=175C C 2 1 G 3 E 123 TO-247-3L NOMENCLATURE IGBT series Technical grade Current, 40: 40A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V, 120: 1200V SGT P 40 V 65 S D B 1 P7 Package P7: TO-247-3L 1,2,3… : Version No.
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