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Silan Microelectronics
SGTP40V65SDB1P7_Datasheet
40A, 650V FIELD STOP IGBT
DESCRIPTION
The SGTP40V65SDB1P7 field stop IGBT adopts Silan Field Stop V technology, features low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields.
FEATURES
40A, 650V, VCE(sat)(typ.)=1.35V@IC=40A Low conduction loss Ultra-fast switching High input impedance TJmax=175C
C 2 1 G
3 E
123 TO-247-3L
NOMENCLATURE
IGBT series Technical grade
Current, 40: 40A
N : N Channel NE : N-channel planar
gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7
Voltage, 65: 650V, 120: 1200V
SGT P 40 V 65 S D B 1 P7
Package P7: TO-247-3L
1,2,3… : Version No.