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SVSP65R110FJDHD4 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

Download the SVSP65R110FJDHD4 datasheet PDF. This datasheet also covers the SVSP65R110P7HD4-SilanSemiconductors variant, as both devices belong to the same 650v super junction mos power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

SVSP65R110P7(T)(S)(FJD)(L)HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Key Features

  • 35A, 650V, RDS(on)(typ. )=90mΩ@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant KEY.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVSP65R110P7HD4-SilanSemiconductors_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVSP65R110FJDHD4
Manufacturer Silan Semiconductors
File Size 563.31 KB
Description 650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet SVSP65R110FJDHD4 Datasheet

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SVSP65R080P7HD4 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics
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SVSP65R280FJDD4 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

Other Datasheets by Silan Semiconductors

Part Number Description
SVSP65R110LHD4 650V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP65R110P7HD4 650V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP65R110SHD4 650V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP65R110THD4 650V SUPER JUNCTION MOS POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVSP65R110P7(T)(S)(FJD)(L)HD4_Datasheet 35A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP65R110P7(T)(S)(FJD)(L)HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES  35A, 650V, RDS(on)(typ.