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SVSP65R110FJDHD4 Datasheet 650v Super Junction Mos Power Transistor

Manufacturer: Silan Semiconductors

Overview: Silan Microelectronics SVSP65R110P7(T)(S)(FJD)(L)HD4_Datasheet 35A, 650V SUPER JUNCTION MOS POWER.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

SVSP65R110P7(T)(S)(FJD)(L)HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.

Key Features

  • 35A, 650V, RDS(on)(typ. )=90mΩ@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant KEY.

More Datasheets from Silan Semiconductors

Part Number Description
SVSP65R110LHD4 650V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP65R110P7HD4 650V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP65R110SHD4 650V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP65R110THD4 650V SUPER JUNCTION MOS POWER TRANSISTOR

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