SVSP65R110FJDHD4 Datasheet | Silan Semiconductors

Silan Microelectronics SVSP65R110P7(T)(S)(FJD)(L)HD4_Datasheet 35A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP65R110P7(T)(S)(FJD)(L)HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. Features - 35A, 650V, RDS(on)(typ.)=90mΩ@VGS=10V - New revolutionary high voltage technology - Ultra low gate charge - Periodic avalanche rated - Extreme dv/dt rated - High peak current capability - 100% avalanche tested - Pb-free lead plating - Ro HS pliant KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max. ID.pulse Qg.typ. Ratings 650 3.0~5.0 110 140 80 Unit V V m A n C Tab 1 pin1 3 1.Gate 2.Drain 3.Source Pin2-8 Pin1.Gate Tab.Drain pin2-8.Source 3 TO-263-2L 1 23 TO-220FJD-3L 1 2 3...