DESCRIPTION
Ø Ø High reverse breakdown voltage rating. Ø This chip can be encapsulated as MBD3004 switching diode. Ø This chip has several thicknesses, can suit for different plastic package. Ø Chip size: 0.34 X 0.34 (mm2); Ø Chip Thickness: 155±20µm or 180±20µm; 2KG034350JL CHIP TOPOGRAPHY La: Chip Size: 340µm; Lb: Pad Size: 180µm; MAXIMUM RATINGS
(Ta=25°C) Characteristics Repetitive Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Peak Forward Surge Current@1.0µs Maximum Operation Junction Temperature Storage Temperature Range Symbol VRRM VR IF IFSM TJ TSTG Value 350 300 225 4.0 150 -65~+150 Unit V V mA A °C °C ELECTRICAL CHARACTERISTICS
(Ta=25°C) Characteristics Symbol Test Conditions IF=20mA. Forward Voltage VF IF=100mA. IF=200mA. Reverse Voltage Reverse Current Total Capacitance Reverse Recovery Time VBR IR CT Trr+ IB=100µA. VR=240V. f=1MHz; VR=0. IF=IR=30mA, RL=100Ω; measured at I R=3mA. Min. ---350 ---Typ. -------Max. 0.87 1.0 1.25 -100 5.0 50 Unit V V V V nA...
Silan