DESCRIPTION
Ø 2SB035100ML is a schottky barrier diode chips Lb La fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capability; Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits; Ø Chip Size:350µm X 350µm; Chip Thickness: 155±20um Product Name 2SB035100MLJY Chip Topography and Dimensions La: Chip Size: 350µm; Lb: Pad Size: 300µm; ORDERING SPECIFICATIONS Specification For Au and AlSi wire bonding package Ø ABSOLUTE MAXIMUM RATINGS
Parameters Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge Current@10ms Maximum Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Ratings 100 75 750 125 -40~125 Unit V mA mA °C °C ELECTRICAL CHARACTERISTICS
(Tamb=25°C) Parameters Reverse Voltage Forward Voltage Symbol VBR VF1 VF2 VF3 Reverse Current IR IR Test Conditions IR=100µA IF=0.1mA IF=10mA IF=250mA VR=50V VR=75V Min.
Silan