2SF292200HYY Datasheet PDF

Silan 2SF292200HYY

2SF292200HYY is a fast recovery diode chips fabricated in silicon epitaxial planar technology; Fast recovery times; High current capability; High surge current capability; Low forward voltage drop; Low reverse current leakage; Top metal is Ag, Back metal is Ag; Chip Size: 2920µm X 2920µm; Chip Thickness: 280±20µm; Chip Topography and Dimensions La: Chip Size:2920 µm; Lb: Pad Size: 2840 µm; Ø ORDERING SPECIFICATIONS Product Name 2SF292200HYY Specification For Au and AlSi wire bonding package ABSOLUTE MAXIMUM RATINGS Parameters Maximum Repetitive Peak Reverse Voltage Average Forward...

Part No.	2SF292200HYY
Datasheet	2SF292200HYY Download
Manufacturer	Silan
Description	FAST RECOVERY DIODE CHIPS
Buy	Stock & Price

DESCRIPTION

Ø Ø Ø Ø Ø Ø Ø Ø 2SF292200HYY is a fast recovery diode chips fabricated in silicon epitaxial planar technology; Fast recovery times; High current capability; High surge current capability; Low forward voltage drop; Low reverse current leakage; Top metal is Ag, Back metal is Ag; Chip Size: 2920µm X 2920µm; Chip Thickness: 280±20µm; Chip Topography and Dimensions La: Chip Size:2920 µm; Lb: Pad Size: 2840 µm; Ø ORDERING SPECIFICATIONS Product Name 2SF292200HYY Specification For Au and AlSi wire bonding package

ABSOLUTE MAXIMUM RATINGS

Parameters Maximum Repetitive Peak Reverse Voltage Average Forward RectifiedCurrent@Tc=150°C Peak Forward Surge Current@8.3ms Maximum Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Ratings 200 20 390 175 -55~175 Unit V A A °C °C

ELECTRICAL CHARACTERISTICS

(Tamb=25 Parameters Reverse Voltage Forward Voltage Reverse Current Reverse recovery time Symbol VBR VF1 VF2 IR Trr ) Test Conditions Min. 200 ----Max. -0.