GENERAL DESCRIPTION
Accuracy epitaxial dope control, advanced planar junction terminal structure and the platinum doped life control, guarantee the best overall performance, ruggedness and reliability characteristics. FEATURES
∗ Ultrafast 35 Nanosecond Recovery Time ∗ Low Forward Voltage Drop ∗ Low Leakage Current ∗ 150°C Operating Junction Temperature NOMENCLATURE ORDERING SPECIFICATIONS Part No. SFR08S40T2 Package TO-220-2L Marking SFR08S40T2 Material Pb free Packing Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.1 2010.10.21 Page 1 of 5 SFR08S40T2_Datasheet ABSOLUTE MAXIMUM RATINGS
Parameter Peak Repetitive Reverse Voltage Average Rectified Forward Current Non Repetitive Peak Surge Current Operation Junction Temperature Storage Temperature Symbol VRRM IF(AV) IFSM TJ Tstg Rating 400 8.0 125 -55~+150 -55~+150 Unit V A A °C °C THERMAL CHARACTERISTICS Parameter Thermal Resistance, Junction-to-Case Symbol RθJC Rating 3.0 Unit °C/W ELECTRICAL CHARACTERISTICS
Parameter Maximum Instanta...