GENERAL DESCRIPTION
Accuracy epitaxial dope control, advanced planar junction terminal structure and the platinum doped life control, guarantee the best overall performance, ruggedness and reliability characteristics. FEATURES
∗ Ultrafast 35 Nanosecond Recovery Time ∗ Low Forward Voltage Drop ∗ Low Leakage Current ∗ 150 °C Operating Junction Temperature NOMENCLATURE ORDERING SPECIFICATIONS Part No. SFR10S40T2 Package TO-220-2L Marking SFR10S40T2 Material Pb free Packing Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.0 2011.05.12 Page 1 of 5 SFR10S40T2_Datasheet ABSOLUTE MAXIMUM RATINGS
Characteristics Peak Repetitive Reverse Voltage Average Rectified Forward Current Non Repetitive Peak Surge Current Operation Junction Temperature Storage Temperature Symbol VRRM IF(AV) IFSM TJ Tstg THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Symbol RθJC ELECTRICAL CHARACTERISTICS
Characteristics Maximum Instantaneous Forward Voltage (Note 1) (IF=10.0 Amps, Tc=25°C) M...