Silan STS65R190FS2
650V SUPER JUNCTION MOS POWER TRANSISTOR
| Part No. | STS65R190FS2 |
|---|---|
| Datasheet | STS65R190FS2 Download |
| Manufacturer |  Silan |
| Description | 650V SUPER JUNCTION MOS POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
2 STS65R190F(L8A)(T)(S)(D)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. 1 3 123 TO-220F-3L 1.Gate 2.Drain 3.Source 13 TO-252-2L D(2) G(1) S(3) S(3) S(3) DFN-4-8x8x0.85-2.0FEATURES
● 20A, 650V, RDS(on)(typ.)=0.155@VGS=10V● New revolutionary high voltage technology
● Ultra low gate charge
● Periodic avalanche rated
● Extreme dv/dt rated
● High peak current capability
● 100% avalanche tested
● Pb-free lead plating
● RoHS compliant 123 TO-220-3L 1 3 TO-263-2L KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max. ID.pulse Qg.typ. Ratings 650 2.5~4.5 0.19 80 33 Unit V V A nC ORDERING INFORMATION Part No. STS65R190FS2 S...
