Silan SVD540F
SVD540T/D/K/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary new type of flat low-voltage structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. It can be widely used in electronic ballast, low-power SWPS.| Part No. | SVD540F |
|---|---|
| Datasheet | SVD540F Download |
| Manufacturer |  Silan |
| Description | 100V N-CHANNEL MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
2FEATURES
1 3 1.Gate 2.Drain 3.Source 1 3 TO-252-2L 1 23 TO-220F-3L● 33A,100V,RDS(on)(typ.)=34m@VGS=10V
● Low gate charge
● Low Crss
● Fast switching
● Improved dv/dt capability 12 3 TO-220-3L 1 23 TO-262-3L ORDERING INFORMATION Part No. SVD540T SVD540DTR SVD540K SVD540F Package TO-220-3L TO-252-2L TO-262-3L TO-220F-3L Marking SVD540T SVD540D SVD540K SVD540F Hazardous Substance Control Pb free Halogen free Halogen free Pb free Packing Tube Tape & Reel Tube Tube
ABSOLUTE MAXIMUM RATINGS
(TC=25C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current TC=25°C TC=100°C Drain Current Pulsed Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy(Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS TJ Tstg SVD540T 130 1.04 Rating SVD540D SVD540K 100 ±20 33 23 110 98 120 0.78 0.96 695.22 -55～+150 -55～+150 SVD540F 33 0.27 Unit V V A A W W/C mJ C C HANGZHOU SILAN...
