Silan SVSP7N60FD2
600V SUPER JUNCTION MOS POWER TRANSISTOR
DESCRIPTION
2 SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, for example, it is suitable for hard and soft switching topologies.FEATURES
1 3 1.Gate 2.Drain 3.Source 12 3 TO-220F-3L● 7A,600V, RDS(on)(typ.)=0.48@VGS=10V
● New revolutionary high voltage technology
● Ultra low gate charge
● Enhanced avalanche capability
● Extreme dv/dt rated
● High peak current capability 123 TO-220FJD-3L 13 TO-252-2L ORDERING INFORMATION Part No. SVSP7N60FJDD2 SVSP7N60DD2TR SVSP7N60FD2 Package TO-220FJD-3L TO-252-2L TO-220F-3L Marking P7N60FJDD2 P7N60DD2 P7N60FD2 Hazardous substance control Halogen free Halogen free Halogen free Packing Type Tube Tape&Reel Tube HANGZHOU SILAN MICROELECTRONICS CO.,L...