Silan SVT03120NL2
The SVT03120NL2 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems.| Part No. | SVT03120NL2 |
|---|---|
| Datasheet | SVT03120NL2 Download |
| Manufacturer |  Silan |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● 12A, 30V, RDS(on)(typ.)=9.5m@VGS=10V● Low gate charge
● Low Crss
● Fast switching
● Improved dv/dt capability
● 100% avalanche tested
● Pb-free lead plating
● RoHS compliant KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.typ Ratings 30 1.0~1.8 12 12 11 Unit V V m A nC D1 D2 G3 6D 5D 4S 4 5 6 3 2 1 DFN-6-2x2x0.75-0.65 ORDERING INFORMATION Part No. SVT03120NL2TR Package DFN-6-2x2x0.75-0.65 Marking 03 Hazardous Substance Control Halogen free Packing Type Tape&Reel HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: // Rev.:1.2 Page 1 of 9 Silan Microelectronics SVT03120NL2_Datasheet
ABSOLUTE MAXIMUM RATINGS
(UNLESS OTHERWISE NOTED, TJ=25C) Characteristics Symbol Test conditions Drain-source Voltage VDS -- Gate-source Voltage VGS -- Drain Current TA=25C, t≤5s ID TA=100C Drain Current Pulsed (Note 1) IDM TA=25C Power Dissipation (Note 2) PD TA=25C Single Pulsed Avalanche Energy L=0.5mH, VDD=10V, RG=25, EAS starting temperature TJ=25C Single Pulsed Avalanche Current IAS -- Operation Junction Temperature Range TJ -- Storage Temperature Range Tstg -- Min.
