Silan SVT035R5NSA
SVT035R5NSA is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems.| Part No. | SVT035R5NSA |
|---|---|
| Datasheet | SVT035R5NSA Download |
| Manufacturer |  Silan |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
4. Gate 1, 2, 3. Source 5, 6; 7, 8. Drain 5678 4 12 3● 21A, 30V, RDS(on)(typ.)= 4.0m@VGS=10V
● Low gate charge
● Low Crss
● Fast switching
● Extreme dv/dt rated SOP-8-225-1.27 ORDERING INFORMATION Part No. SVT035R5NSA SVT035R5NSATR Package SOP-8-225-1.27 SOP-8-225-1.27 Marking 035R5NSA 035R5NSA Hazardous Substance Control Halogen free Halogen free Packing Type Tube Tape&Reel
ABSOLUTE MAXIMUM RATINGS
(UNLESS OTHERWISE NOTED, TA=25C) Characteristics Drain-source Voltage Gate-source Voltage Drain Current TC=25°C TC=100°C Drain Current Pulsed Power Dissipation (TC=25C) -Derate above 25C Single Pulsed Avalanche Energy L=0.5mH (Note 1) L=0.1mH Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS TJ Tstg Ratings 30 ±20 21 13 120 4.6 0.04 200 84 -55～+150 -55～+150 Unit V V A A W W/C mJ mJ C C HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: // Rev.:1.0 Page 1 of 7 Silan Microelectronics SVT035R5NSA_Datasheet THERMAL CHARACTERISTIC...
