Silan SVT077R5NS
The SVT077R5NT/D/S/KL is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems.| Part No. | SVT077R5NS |
|---|---|
| Datasheet | SVT077R5NS Download |
| Manufacturer |  Silan |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● 95A, 68V, RDS(on)(typ.)=6.5m@VGS=10V● Low gate charge
● Low Crss
● Fast switching
● Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-263-2L 123 TO-262L-3L 1 2 3 TO-220-3L 13 TO-252-2L ORDERING INFORMATION Part No. SVT077R5NT SVT077R5NDTR SVT077R5NS SVT077R5NSTR SVT077R5NKL Package TO-220-3L TO-252-2L TO-263-2L TO-263-2L TO-262L-3L Marking 077R5NT 077R5ND 077R5NS 077R5NS 077R5NKL Hazardous Substance Control Pb free Halogen free Halogen free Halogen free Pb free Packing Type Tube Tape&Reel Tube Tape&Reel Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: // Rev.:1.5 Page 1 of 9 Silan Microelectronics SVT077R5NT(D)(S)(KL)_Datasheet
ABSOLUTE MAXIMUM RATINGS
(UNLESS OTHERWISE NOTED, TC=25C) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25°C TC=100°C Power Dissipation (TC=25C) -Derate above 25C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol...
