Silan SVT10500PD
SVT10500PD is a P channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in UPS, Power Management for Inverter Systems.| Part No. | SVT10500PD |
|---|---|
| Datasheet | SVT10500PD Download |
| Manufacturer |  Silan |
| Description | P-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
2 1 3 1.Gate 2.Drain 3.SourceFEATURES
● -30A，-100V，RDS(on)(typ.) =35m@VGS=-10V● Low gate charge
● Low Crss
● Fast switching
● Improved dv/dt capability
● 100% avalanche tested
● Pb-free lead plating
● RoHS compliant 1 3 TO-252-2L KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.typ Ratings -100 -1.5~-2.5 50 -30 80 Unit V V m A nC ORDERING INFORMATION Part No. SVT10500PDTR Package TO-252-2L Marking 10500PD Hazardous Substance Control Halogen free Packing Type Tape & Reel HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: // Rev.:1.0 Page 1 of 9 Silan Microelectronics SVT10500PD_Datasheet
ABSOLUTE MAXIMUM RATINGS
(UNLESS OTHERWISE NOTED, TJ=25C) Characteristics Symbol Test conditions Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed (Note 1) Power Dissipation (Note 2) Single Pulsed Avalanche Energy Single Pulsed Current Operation Junction Temperature Range Storage Temperature Range VDS -- VGS -- TC=25C ID TC=100C IDM TC=25C PD TC=25C L=0.5mH, VDD=-80V, RG=25, EAS starting temperature TJ=25C IAS -- TJ -- Tstg -- Ratings Unit Min.
