Silan SVT20240NP7
The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems.| Part No. | SVT20240NP7 |
|---|---|
| Datasheet | SVT20240NP7 Download |
| Manufacturer |  Silan |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
SVT20240NT(P7)(S) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. 2 1 3 1 3 TO-263-2L 1. Gate 2. Drain 3.SourceFEATURES
● 72A, 200V, RDS(on)(typ.)=19.7m@VGS=10V● Low gate charge
● Low Crss
● Fast switching
● Improved dv/dt capability TO-247-3L 1 2 3 TO-220-3L ORDERING INFORMATION Part No. SVT20240NT SVT20240NP7 SVT20240NS SVT20240NSTR Package TO-220-3L TO-247-3L TO-263-2L TO-263-2L Marking 20240NT 20240NP7 20240NS 20240NS Hazardous Substance Control Pb free Pb free Halogen free Halogen free Packing Type Tube Tube Tube Tape&Reel
ABSOLUTE MAXIMUM RATINGS
(UNLESS OTHERWISE NOTED, TJ=25C) Characteristics Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Drain Current ID TC=100°C Drain Current Pulsed IDM Power Dissipation (TC=25C) PD -Derate above 25C Single Pulsed Avalanche Energy (Note 1) EAS Operation Junction Temperature Range TJ Storage Temperature Range Tstg Ratings SVT20240NT/S SVT202...
