SQ55801 Description
The SQ55800/SQ55801 is an isolated dual-channel gate driver for Si MOSFETs, SiC MOSFETs and IGBTs with a propagation delay of only 32ns. Each channel has at least 5A source and 8A sink ability, which can drive a power transistor up to 2MHz. It can be used as two low-side drivers, two high-side drivers, or as a half-bridge driver with programmable dead time.
SQ55801 Key Features
- Insulation voltage: (SQ55800) o 5700Vrms input-to-output Per UL1577 o ±1850V channel-to-channel
- Insulation voltage: (SQ55801) o 2500Vrms input-to-output Per UL1577 o ±700V channel-to-channel
- CMTI Higher Than ±150V/ns
- Switching Parameters
- 5A Peak Source, 8A Peak Sink Output
- 3V to 18V Input Power Supply Range
- Up to 25V Output Power Supply
- Programmable Dead Time
- Isolation Barrier Life >40 Years
- Operating Temperature Range: -40°C to +125°C