Silicon-Based Technology SBT103AD
Small Signal Schottky Barrier Diodes
| Part No. | SBT103AD |
|---|---|
| Datasheet | SBT103AD Download |
| Manufacturer | Silicon-Based Technology |
| Description | Small Signal Schottky Barrier Diodes |
| Buy | Stock & Price |
FEATURES
and Advantages: Low forward voltage drop(VF) Low reverse leakage current (IR) Very small conduction power loss Very small switching power loss Very high switching speed Very high reliability Symbol VFMELECTRICAL CHARACTERISTICS
: (@TA=25°C unless otherwise specified) Characteristic Reverse Breakdown Voltage SBT103AD SBT103BD SBT103CD Min. 40 30 20 Typ. - Max. - Unit V Test Conditions IRS=100µA Maximum Forward Voltage Drop Maximum Peak Reverse Current SBT103AD SBT103BD SBT103CD VFM IRM - - 0.35 0.50 5.0 V µA IF=20mA IF=200mA VR=30V VR=20V VR=10V - - Total Capacitance Cj trr - 50 10 - pF ns VR=0V, f=1.0MHZ IF=IR=50mA to 200mA, Irr=0.1 IR,RL=100Ω Reverse Recovery Time SBT Silicon-Based Technology Corporation 1F,No.23, R&D Rd.I, Hsinchu Science Park, Taiwan, R.O.C Tel 886-3-5777897 Fax 886-3-5779832 DataSheet 4 U .com 4U.com S BT SBT103D SeriesMAXIMUM RATINGS
: (@TA=25°C unless otherwise specified) Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Bl...
