AD500-9
AD500-9 TO52S1F2
Avalanche Photodiode for NIR with bandpass filter for 905 nm
Special characteristics: quantum efficiency > 70 % at λ 890
- 915 nm high speed, low noise
500 µm diameter active area low slope multiplication curve
Parameters:
Active Area
Dark Current 1)
(M = 100) Total Capacitance 1)
(M = 100)
Breakdown Voltage UBR (at ID = 2µA)
Temperature Coefficient of UBR
Spectral Responsivity
(at 905 nm; M = 100)
Cut-off Frequency
(-3d B; M = 100)
905 nm
Rise Time
(M = 100; 50 Ω)
905 nm
Optimum Gain
"Excess Noise" factor
(M = 100)
"Excess Noise" index
(M = 100)
Noise Current
(M = 100)
N.E.P.
(M = 100, 905 nm)
Operating Temperature
Storage Temperature
0.196 mm2 ∅ 500 µm max. 5 n A typ. 0.5
- 1 n A typ. 1.2 p F 120
- 300 V typ. > 200 V typ. 1.55 V/K min. 48 A/W typ. 52 A/W typ. 0.5 GHz
550 ps 50
- 60 typ. 2.5 typ. 0.2 max. 1 p A/Hz½ max. 2
- 10-14 W/Hz½ -20 ... +70 °C -55 ... +100 °C
1) measurement conditions: Setup of photo current 10 n A at M = 1...
