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AD500-9 TO52S1F2
Avalanche Photodiode for NIR with bandpass filter for 905 nm
Special characteristics:
quantum efficiency > 70 % at λ 890 - 915 nm high speed, low noise
500 µm diameter active area low slope multiplication curve
Parameters:
Active Area
Dark Current 1)
(M = 100) Total Capacitance 1)
(M = 100)
Breakdown Voltage UBR (at ID = 2µA)
Temperature Coefficient of UBR
Spectral Responsivity
(at 905 nm; M = 100)
Cut-off Frequency
(-3dB; M = 100)
905 nm
Rise Time
(M = 100; 50 Ω)
905 nm
Optimum Gain
"Excess Noise" factor
(M = 100)
"Excess Noise" index
(M = 100)
Noise Current
(M = 100)
N.E.P.
(M = 100, 905 nm)
Operating Temperature
Storage Temperature
0.196 mm2 ∅ 500 µm max. 5 nA typ. 0.5 - 1 nA
typ. 1.2 pF 120 - 300 V typ. > 200 V typ. 1.55 V/K min. 48 A/W typ.
AD500-9 Datasheet
