9960GM Datasheet | Silicon Standard

Description D1 D2 Advanced Power MOSFETs from Silicon Standard provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SSM9960M is in the SO-8 package, which is widely preferred for mercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. G1 S1 G2 S2 This device is available with Pb-free lead finish (second-level interconnect) as SSM9960GM. Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=100°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 40 ± 20 7.8 6.2 20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Value Max. 62.5 Unit °C/W 8/21/2004 Rev.2.01 .Silicon Standard. 1 of 6 .. SSM9960M/GM Electrical Characteristics @ T j=25o C (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250u A Min. 40 1 - Typ. 0.032 Max. Units 20 32 3 1 25 ±100 V V/°C mΩ mΩ V S u A u A n A n C n C n C ns ns ns ns p F p F p F ∆BV DSS/∆Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1m A Static Drain-Source On-Resistance VGS=10V, ID=7A VGS=4.5V, ID=5A VDS=VGS, ID=250u A VDS=10V, ID=7A 25 14.7 7.1 6.8 11.5 6.3 28.2 12.6 1725 235 145 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70o C) o VDS=40V, VGS=0V VDS=32V ,VGS=0V VGS= ± 20V ID=7A VDS=20V VGS=4.5V VDS=20V ID=1A RG=3.3Ω ,VGS=10V RD=20Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate...