• Part: SSM2316GN
  • Description: N-channel Enhancement-mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: Silicon Standard
  • Size: 471.89 KB
Download SSM2316GN Datasheet PDF
Silicon Standard
SSM2316GN
DESCRIPTION The SSM2316GN acheives fast switching performance with low gate charge without a plex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. The SSM2316GN is supplied in an Ro HS-pliant SOT-23-3 package, which is widely used for lower power mercial and industrial surface mount applications. S SOT-23-3 G ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-source voltage Gate-source voltage Continuous drain current 3, T A = 25°C Pulsed drain current 1,2 TA = 70°C Total power dissipation 3, TA = 25°C Linear derating factor Storage temperature range Operating junction temperature range THERMAL CHARACTERISTICS Symbol RΘJA Parameter Maximum thermal resistance, junction-ambient3 Value 30 ± 20 4.7 3.7 10 1.38 0.01 -55 to 150...