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SSM2602GY - N-channel Enhancement-mode Power MOSFET

General Description

Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

industrial applications.

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Datasheet Details

Part number SSM2602GY
Manufacturer Silicon Standard
File Size 176.64 KB
Description N-channel Enhancement-mode Power MOSFET
Datasheet download datasheet SSM2602GY Datasheet

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SSM2602GY N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY Capable of 2.5V gate drive Lower on-resistance Surface mount package RoHS Compliant DESCRIPTION S D D SOT-26 G D D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial–industrial applications. BVDSS RDS(ON) ID G 20V 34mΩ 6.3A D S Pb-free; RoHS-compliant ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V Continuous Drain Current3, VGS @ 4.