Datasheet4U Logo Datasheet4U.com

SSM2602Y - N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Product Overview

📥 Download Datasheet

Datasheet preview – SSM2602Y

Datasheet Details

Part number SSM2602Y
Manufacturer Silicon Standard
File Size 162.90 KB
Description N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Datasheet download datasheet SSM2602Y Datasheet
Additional preview pages of the SSM2602Y datasheet.

Product details

Description

S D D G SOT-26 D D These Power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistance in an extremely efficient and cost-effective device.The SOT-26 package is widely used for commercial and industrial surface-mount applications.BV DSS R DS(ON) ID 20V 34mΩ 5.3A D G S Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=70°C IDM Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V

📁 Similar Datasheet

  • SSM2602 - Low Power Audio Codec (Analog Devices)
  • SSM2603 - Low Power Audio Codec (Analog Devices)
  • SSM2604 - Low Power Audio Codec (Analog Devices)
  • SSM2625 - N-Channel Enhancement Mode Power MOSFET (SeCoS)
  • SSM2000 - HUSH Stereo Noise Reduction (Analog)
  • SSM2005 - Decoder 5.1-Channel Soundfield Generator (Analog)
  • SSM200UF-A - (SSMxxxUF-A) HERMETIC ULTRAFAST DIODE (Sensitron)
  • SSM200UF3A - (SSMxxxUF3A) HERMETIC ULTRAFAST DIODE (Sensitron)
Other Datasheets by Silicon Standard
  • SSM2602GY - N-channel Enhancement-mode Power MOSFET
  • SSM2603GY - P-channel Enhancement-mode Power MOSFET
  • SSM2605GY - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • SSM2030GM - N- and P-channel Enhancement-mode Power MOSFET
  • SSM20G45EGH - N-channel Insulated-Gate Bipolar Transistor
  • SSM20G45EGJ - N-channel Insulated-Gate Bipolar Transistor
Published: |