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SSM2602Y - N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

General Description

These Power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistance in an extremely efficient and cost-effective device.

The SOT-26 package is widely used for commercial and industrial surface-mount applications.

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Datasheet Details

Part number SSM2602Y
Manufacturer Silicon Standard
File Size 162.90 KB
Description N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Datasheet download datasheet SSM2602Y Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSM2602Y N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Capable of 2.5V gate drive Low on-resistance Surface mount package Description S D D G SOT-26 D D These Power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistance in an extremely efficient and cost-effective device. The SOT-26 package is widely used for commercial and industrial surface-mount applications. BV DSS R DS(ON) ID 20V 34mΩ 5.3A D G S Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=70°C IDM Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V Continuous Drain Current3, VGS @ 4.