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SSM3310GJ - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download the SSM3310GJ datasheet PDF. This datasheet also covers the SSM3310GH variant, as both devices belong to the same p-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The SSM3310GH is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited for use in low voltage battery applications.

The through-hole version, the SSM3310GJ in TO-251, is available for low-footprint vertical mounting.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SSM3310GH-SiliconStandard.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSM3310GJ
Manufacturer Silicon Standard
File Size 405.95 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet SSM3310GJ Datasheet

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Other Datasheets by Silicon Standard

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SSM3310GH P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SSM3310GH,J P-channel Enhancement-mode Power MOSFET 2.5V low gate drive capability Simple drive requirement Fast switching Pb-free; RoHS compliant. DESCRIPTION G D S The SSM3310GH is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited for use in low voltage battery applications. The through-hole version, the SSM3310GJ in TO-251, is available for low-footprint vertical mounting. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance.