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SSM40T03GP Datasheet PDF

Silicon Standard SSM40T03GP

the SSM40T03GP in TO-220, is available for vertical-mounting, where a small footprint is required on the board, and/or an external heatsink is to be attached.
Part No. SSM40T03GP
Datasheet SSM40T03GP Download
Manufacturer
Silicon Standard
Description N-channel Enhancement-mode Power MOSFET
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SSM40T03GP datasheet page 1 preview

DESCRIPTION

The SSM40T03GS is in a TO-263 package, which is widely used for commercial and industrial surface-mount applications. This device is suitable for low-voltage applications such as DC/DC converters. The through-hole version, G G D S TO-263 (S)

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VGS ID @ TC=25°C ID @ TC=100°C IDM PD @ TC=25°C Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 D TO-220(P) S Units V V A A A W W/°C Rating 30 ±25 28 24 95 31 0.25 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 °C °C THERMAL DATA Symbol Parameter Maximum Thermal Resistance Junction-case Maximum Thermal Resistance Junction-ambient Value 4 62 Units °C/W °C/W RΘJC RΘJA 9/16/2005 Rev.3.1 1 of 5 SSM40T03GP,S

ELECTRICAL CHARACTERISTICS

(at Tj=25°C, unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min.
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