The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SSM4435M
P-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Simple drive requirement Low on-resistance
D D D
D
BVDSS R DS(ON) ID
G S
-30V 20mΩ -8A
Fast switching
SO-8
S S
Description
Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial and industrial surface mount applications and is well suited for low voltage applications such as DC/DC converters.
D
G S
Absolute Maximum Ratings
Symbol VDS VGS I D @ TA=25°C I D @ TA=70°C I DM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
1,2 3 3
Rating - 30 ± 20 -8 -6 -50 2.5 0.