SSM85T08GP Datasheet | Silicon Standard

DESCRIPTION BVDSS RDS(ON) ID The Advanced Power MOSFETs from Silicon Standard Corp. provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all mercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (SSM85T08GP) are available for low-profile applications. GD S 80V 13mΩ 75A TO-263(S) Pb-free; Ro HS-pliant ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy3...