SSM9971GM Datasheet | Silicon Standard

DESCRIPTION The SSM9971GM acheives fast switching performance with low gate charge without a plex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. The SSM2310GM is supplied in an Ro HS-pliant SO-8 package, which is widely used for medium power mercial and industrial surface mount applications. 60V 50mΩ 5A Pb-free; Ro HS-pliant SO-8 D2 D2 D1 D1 G2 S2 SO-8 S1 G1 ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current 1,2 3 , Value 60 ± 25 T A = 25°C TA = 100°C 5 3.2 30 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total power dissipation , TA = 25°C Linear derating factor Storage temperature range Operating junction temperature range THERMAL CHARACTERISTICS Symbol RΘJA Parameter Maximum thermal resistance, junction-ambient Value 62.5 Units °C/W Notes: 1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C. 2.Pulse width <300us, duty cycle <2%. 3.Mounted on a square inch of copper pad on FR4 board; 135°C/W when mounted on the minimum pad area required for soldering. 10/16/2005 Rev.3.1 .Silicon Standard. 1 of 5 ELECTRICAL CHARACTERISTICS Symbol BVDSS Parameter Drain-source breakdown voltage Breakdown voltage temperature coefficient (at Tj = 25°C, unless otherwise specified) Test Conditions VGS=0V, ID=250u A Reference to 25°C, ID=1m A VGS=10V, ID=5A VGS=4.5V, ID=2.5A Min. 60 1 Typ. 0.06 7 32.5 4.9 8.8 9.6 10 30 5.5 1658 156 109 Max. Units 50 60 3 1 25 ±100 V V/°C mΩ mΩ V S u A u A n A n C n C n C ns ns ns ns p F p F p F ∆ BV DSS/∆ Tj RDS(ON) Static drain-source on-resistance2 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate threshold voltage Forward transconductance VDS=VGS, ID=250u A VDS=10V, ID=5A Drain-source leakage current VDS=60V, VGS=0V VDS=48V ,VGS=0V, Tj = 70°C VGS=±25V ID=5A VDS=48V VGS=10V...