Datasheet4U Logo Datasheet4U.com
Silicon Storage Technology logo

29EE010

Manufacturer: Silicon Storage Technology

29EE010 datasheet by Silicon Storage Technology.

29EE010 datasheet preview

29EE010 Datasheet Details

Part number 29EE010
Datasheet 29EE010_SiliconStorageTechnologyInc.pdf
File Size 326.37 KB
Manufacturer Silicon Storage Technology
Description 1 Mbit (128K x8) Page-Mode EEPROM
29EE010 page 2 29EE010 page 3

29EE010 Overview

The SST29EE/LE/VE010 are 128K x8 CMOS Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability pared with alternate approaches. The SST29EE/LE/VE010 write with a single power supply.

29EE010 Key Features

  • Single Voltage Read and Write Operations
  • 5.0V-only for SST29EE010
  • 3.0-3.6V for SST29LE010
  • 2.7-3.6V for SST29VE010
  • Superior Reliability
  • Endurance: 100,000 Cycles (typical)
  • Greater than 100 years Data Retention
  • Low Power Consumption
  • Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V
  • Standby Current: 10 µA (typical)
Silicon Storage Technology logo - Manufacturer

More Datasheets from Silicon Storage Technology

View all Silicon Storage Technology datasheets

Part Number Description

29EE010 Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts