29EE010 - 1 Mbit (128K x8) Page-Mode EEPROM

Datasheet Summary

Description

The SST29EE/LE/VE010 are 128K x8 CMOS Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology.

The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

Features

Single Voltage Read and Write Operations.
5.0V-only for SST29EE010.
3.0-3.6V for SST29LE010.
2.7-3.6V for SST29VE010.
Superior Reliability.
Endurance: 100,000 Cycles (typical).
Greater than 100 years Data Retention.
Low Power Consumption.
Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V.
Standby Current: 10 µA (typical).
Fast Page-Write Operation.
128 Bytes per Pag.

Silicon Storage Technology

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Datasheet Details

Part number	29EE010
Manufacturer	Silicon Storage Technology
File Size	326.37 KB
Description	1 Mbit (128K x8) Page-Mode EEPROM
Datasheet	29EE010 Datasheet
Additional preview pages of the 29EE010 datasheet.

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Full PDF Text Transcription

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1 Mbit (128K x8) Page-Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 SST29EE010 / SST29LE010 / SST29VE0101Mb Page-Mode flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for SST29EE010 – 3.0-3.6V for SST29LE010 – 2.7-3.6V for SST29VE010 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V – Standby Current: 10 µA (typical) • Fast Page-Write Operation – 128 Bytes per Page, 1024 Pages – Page-Write Cycle: 5 ms (typical) – Complete Memory Rewrite: 5 sec (typical) – Effective Byte-Write Cycle Time: 39 µs (typical) • Fast Read Access Time – 5.0V-only operation: 70 and 90 ns – 3.0-3.

Published: May 28, 2005 |