• Part: 29SF020
  • Description: SST29SF020
  • Manufacturer: Silicon Storage Technology
  • Size: 445.38 KB
Download 29SF020 Datasheet PDF
Silicon Storage Technology
29SF020
29SF020 is SST29SF020 manufactured by Silicon Storage Technology.
FEATURES : - Organized as 256K x8 / 512K x8 - Single Voltage Read and Write Operations - 4.5-5.5V for SST29SF020/040 - 2.7-3.6V for SST29VF020/040 - Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention - Low Power Consumption: - Active Current: 10 m A (typical) .. - Standby Current: 30 µA (typical) for SST29SF020/040 1 µA (typical) for SST29VF020/040 - Sector-Erase Capability - Uniform 128 Byte sectors - Fast Read Access Time: - 55 ns for SST29SF020/040 - 70 ns for SST29VF020/040 - Latched Address and Data - Fast Erase and Byte-Program: - Sector-Erase Time: 18 ms (typical) - Chip-Erase Time: 70 ms (typical) - Byte-Program Time: 14 µs (typical) - Chip Rewrite Time: 4 seconds (typical) for SST29SF/VF020 8 seconds (typical) for SST29SF/VF040 - Automatic Write Timing - Internal VPP Generation - End-of-Write Detection - Toggle Bit - Data# Polling - TTL I/O patibility for SST29SF020/040 - CMOS I/O patibility for SST29VF020/040 - JEDEC Standard - Flash EEPROM Pinouts and mand sets - Packages Available - 32-lead PLCC - 32-lead TSOP (8mm x 14mm) - All non-Pb (lead-free) devices are Ro HS pliant PRODUCT DESCRIPTION The SST29SF020/040 and SST29VF020/040 are 256K x8 / 512K x8 CMOS Small-Sector Flash (SSF) manufactured with SST’s proprietary, high-performance CMOS Super Flash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability pared with alternate approaches. The SST29SF020/040 devices write (Program or Erase) with a 4.5-5.5V power supply. The SST29VF020/040 devices write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pin assignments for x8 memories. Featuring high performance Byte-Program, the SST29SF020/040 and SST29VF020/040 devices provide a maximum Byte-Program time of 20 µsec. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a...