37VF020 Datasheet | Silicon Storage Technology

FEATURES : - Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8 - 2.7-3.6V Read Operation - Superior Reliability - Endurance: At least 1000 Cycles - Greater than 100 years Data Retention - Low Power Consumption: - Active Current: 10 m A (typical) - Standby Current: 2 µA (typical) - Fast Read Access Time: - 70 ns - 90 ns - Latched Address and Data - Fast Byte-Program Operation: - Byte-Program Time: 10 µs (typical) - Chip Program Time: 0.6 seconds (typical) for SST37VF512 1.2 seconds (typical) for SST37VF010 2.4 seconds (typical) for SST37VF020 4.8 seconds (typical) for SST37VF040 - Electrical Erase Using Programmer - Does not require UV source - Chip-Erase Time: 100 ms (typical) - CMOS I/O patibility - JEDEC Standard Byte-wide Flash EEPROM Pinouts - Packages Available - 32-pin PLCC - 32-pin TSOP (8mm x 14mm) - 32-pin PDIP PRODUCT DESCRIPTION The SST37VF512/010/020/040 devices are 64K x8 / 128K x8 / 256K x8 / 512K x8 CMOS, Many-Time Programmable (MTP), low cost flash, manufactured with SST’s proprietary, high performance CMOS Super Flash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability pared with alternate approaches. The SST37VF512/010/020/040 can be electrically erased and programmed at least 1000 times using an external programmer, e.g., to change the contents of devices in inventory. The SST37VF512/010/020/040 have to be erased prior to programming. These devices conform to JEDEC standard pinouts for byte-wide flash memories. Featuring high performance Byte-Program, the SST37VF512/010/020/040 provide a typical Byte-Program time of 10 µs. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with an endurance of at least 1000 cycles. Data retention is rated at greater than 100 years. The SST37VF512/010/020/040 are suited for applications that require infrequent writes and low power nonvolatile storage. These devices will improve flexibility,...