39VF020
39VF020 is SST39VF020 manufactured by Silicon Storage Technology.
FEATURES
:
- Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8
- Single Voltage Read and Write Operations
- 3.0-3.6V for SST39LF512/010/020/040
- 2.7-3.6V for SST39VF512/010/020/040
- Superior Reliability
- Endurance: 100,000 Cycles (typical)
- Greater than 100 years Data Retention
- Low Power Consumption:
- Active Current: 10 m A (typical)
- Standby Current: 1 µA (typical)
- Sector-Erase Capability
- Uniform 4 KByte sectors
- Fast Read Access Time:
- 45 ns for SST39LF512/010/020/040
- 55 ns for SST39LF020/040
- 70 and 90 ns for SST39VF512/010/020/040
- Latched Address and Data
- Fast Erase and Byte-Program:
- Sector-Erase Time: 18 ms (typical)
- Chip-Erase Time: 70 ms (typical)
- Byte-Program Time: 14 µs (typical)
- Chip Rewrite Time: 1 second (typical) for SST39LF/VF512 2 seconds (typical) for SST39LF/VF010 4 seconds (typical) for SST39LF/VF020 8 seconds (typical) for SST39LF/VF040
- Automatic Write Timing
- Internal VPP Generation
- End-of-Write Detection
- Toggle Bit
- Data# Polling
- CMOS I/O patibility
- JEDEC Standard
- Flash EEPROM Pinouts and mand sets
- Packages Available
- 32-lead PLCC
- 32-lead TSOP (8mm x 14mm)
- 48-ball TFBGA (6mm x 8mm) for 1 Mbit
PRODUCT DESCRIPTION
The SST39LF512/010/020/040 and SST39VF512/010/ 020/040 are 64K x8, 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS Super Flash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability pared with alternate approaches. The SST39LF512/ 010/020/040 devices write (Program or Erase) with a 3.03.6V power supply. The SST39VF512/010/020/040 devices write with a 2.7-3.6V power supply. The devices conform to JEDEC standard pinouts for x8 memories. Featuring high performance Byte-Program, the SST39LF512/010/020/040 and SST39VF512/010/020/ 040 devices provide a maximum Byte-Program time of 20 µsec. These devices use Toggle Bit or Data# Polling to indicate the pletion...