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39VF512 Datasheet

Manufacturer: Silicon Storage Technology
39VF512 datasheet preview

Datasheet Details

Part number 39VF512
Datasheet 39VF512-SiliconStorageTechnology.pdf
File Size 322.05 KB
Manufacturer Silicon Storage Technology
Description SST39VF512
39VF512 page 2 39VF512 page 3

39VF512 Overview

The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability pared with alternate approaches. The SST39LF512/ 010/020/040 devices write (Program or Erase) with a 3.03.6V power supply. The SST39VF512/010/020/040 devices write with a 2.7-3.6V power supply.

39VF512 Key Features

  • Single Voltage Read and Write Operations
  • 3.0-3.6V for SST39LF512/010/020/040
  • 2.7-3.6V for SST39VF512/010/020/040
  • Superior Reliability
  • Endurance: 100,000 Cycles (typical)
  • Greater than 100 years Data Retention
  • Low Power Consumption (typical values at 14 MHz)
  • Active Current: 5 mA (typical)
  • Standby Current: 1 µA (typical)
  • Sector-Erase Capability
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39VF512 Distributor

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