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SST12CP11 Datasheet 2.4 Ghz High-power And High-gain Power Amplifier

Manufacturer: Silicon Storage Technology

Overview: 2.4 GHz High-Power and High-Gain Power Amplifier A Microchip Technology pany SST12CP11 Product Brief The SST12CP11 is a high-power and high-gain power amplifier (PA) based on the highly-reliable InGaP/GaAs HBT technology.This PA can be easily configured for high-power applications with good power-added efficiency while operating over the 2.4-2.5 GHz frequency band. It typically provides 34 dB gain and has excellent linearity, typically ~3% added EVM at 25 dBm output power, which is essential for 54 Mbps 802.11g/n operation while meeting 802.11g spectrum mask at 28.5 dBm.

Datasheet Details

Part number SST12CP11
Manufacturer Silicon Storage Technology
File Size 39.94 KB
Description 2.4 GHz High-Power and High-Gain Power Amplifier
Datasheet SST12CP11-SiliconStorageTechnology.pdf

Key Features

  • easy board-level usage along with high-speed power-up/-down control. The SST12CP11 is offered in 16-contact VQFN package. Features.
  • High Gain:.
  • Typically 34 dB gain across 2.4.
  • 2.5 GHz Block Diagram VCC1 VCC2 VCC3.
  • High linear output power (at 5V).
  • >30 dBm P1dB.
  • Meets 802.11g OFDM ACPR requirement up to 28.5 dBm.
  • Added EVM ~3% up to 25 dBm for 54 Mbps 802.11g signal.
  • Meets 802.11b ACPR requirement up to 28.5 dBm RFIN Input.

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